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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION *With TO-220 package *Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS *Audio frequency power amplifier *High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER 2SA1006 VCBO Collector-base voltage 2SA1006A 2SA1006B 2SA1006 VCEO Collector-emitter voltage 2SA1006A 2SA1006B VEBO IC ICM PT Emitter-base voltage Collector current Collector current-Peak Ta=25 Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open collector Open base Open emitter CONDITIONS VALUE -180 -200 -250 -180 -200 -250 -5 -1.5 -3.0 1.5 W V A A V V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency 2SA1006 2SA1006A 2SA1006B CONDITIONS IC=-0.5A; IB=-50mA IC=-0.5A ;IB=-50mA VCB=-150V ;IE=0 VEB=-3V; IC=0 IC=-5mA ; VCE=-5V IC=-150mA ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-100mA ; VCE=10V MIN TYP. MAX -1.0 -1.5 -1 -1 UNIT V V A A 30 60 45 80 320 pF MHz hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1006 2SA1006A 2SA1006B Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B 4 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B 5 |
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